v rrm = 50 v - 400 v i o = 1 a features ? ideal for printed circuit board db package ? not esd sensitive mechanical data s g g ? high surge current capability case: molded plastic single phase glass passivated silicon brid g e rectifier ? types from 50 v up to 400 v v rrm ? reliable low cost construction utilizing molded plastic technique mounting position: any cditi db101g thru DB104G DB104G db103g maximum ratings at tc = 25 c, unless otherwise specified polarity: polarrity symbols marked on the body ? small size, simple installation terminals: plated terminals , solderable per mil-std- 202, method 208 paramete r s ymbol db101 g db102 g unit repetitive peak reverse voltage v rrm 50 100 v rms reverse voltage v rms 35 70 v dc blocking voltage v dc 50 100 v operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol db101g db102g unit maximum average forward rectified current i o 1.0 1.0 a peak forward surge current i fsm 30 30 a maximum instantaneous forward voltage drop 1.1 1.1 55 500 500 typical junction capacitance c j 25 25 pf typical thermal resistance r jc 20 20 c/w 25 25 20 20 v f 5 a v electrical characteristics at tc = 25 c, unless otherwise specified 500 500 -55 to 150 -55 to 150 c on diti ons t a = 25 c i f = 1.0 a conditions DB104G 200 140 db103g -55 to 150 maximum dc reverse current at rated dc blocking voltage i r t a = 125 c 280 400 200 1.1 1.1 db103g single phase, half sine wave, 60 hz , resistive or inductive load for capacitive load derate current by 20% t a = 40 c 1.0 1.0 t p = 8.3 ms, half sine 30 30 -55 to 150 DB104G 5 400 www.genesicsemi.com/s ilicon-products/bridge-rectifiers/ 1
db101g thru DB104G www.genesicsemi.com/s ilicon-products/bridge-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. di i i i h d ( illi t ) db101g thru DB104G di mens i ons i n i nc h es an d ( m illi me t ers ) www.genesicsemi.com/s ilicon-products/bridge-rectifiers/ 3
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